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NE425S01-T1B

Part No NE425S01-T1B
Manufacturer NEC
Description RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:12472 pcs
Quantity Unit Price Ext. Price
1+ $2.0 $200
10+ $1.96 $980
100+ $1.9 $1900
1000+ $1.84 $1840
10000+ $1.76 $1760
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Max Operating Temperature125 °C
Drain to Source Voltage (Vdss)4 V
Power Dissipation165 mW
Continuous Drain Current (ID)10 mA
Drain to Source Breakdown Voltage4 V
Gate to Source Voltage (Vgs)-3 V
Frequency12 GHz
Gain12 dB
RoHSCompliant
Case/PackageSO
Max Power Dissipation165 mW

Introduce

We can supply NE425S01-T1B , send us a request quote to request NE425S01-T1B pirce and lead time.Wisdom Mobility is a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NE425S01-T1B.The price and lead time for NE425S01-T1B depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part NE425S01-T1B.We look forward to working with you to establish long-term relations of cooperation