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NAND01GR3B2BZA6E

Part No NAND01GR3B2BZA6E
Manufacturer Micron Technology
Description IC FLASH 1G PARALLEL 63VFBGA
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

MountSurface Mount
Density1 Gb
Memory TypeNon-Volatile
Height Seated (Max)1.05mm
Number of Functions1
Package / Case63-TFBGA
TechnologyFLASH - NAND
Address Bus Width28b
Voltage - Supply1.7V~1.95V
Number of Pins63
Sector Size128K
Moisture Sensitivity Level (MSL)3 (168 Hours)
Operating Temperature-40°C~85°C TA
HTS Code8542.32.00.51
Memory InterfaceParallel
Toggle BitNO
Mounting TypeSurface Mount
Word Size8b
Pin Count63
Memory Width8
Memory Size1Gb 128M x 8
PackagingTray
Terminal Pitch0.8mm
Access Time (Max)30 ns
Organization128MX8
Command User InterfaceYES
Number of Sectors/Size1K
Terminal FinishTIN SILVER COPPER
Ready/BusyYES
Terminal PositionBOTTOM
Number of Terminations63
Supply Voltage-Max (Vsup)1.95V
Supply Voltage1.8V
ECCN Code3A991.B.1.A
Memory FormatFLASH
Qualification StatusNot Qualified
Pbfree Codeyes
RoHS StatusROHS3 Compliant
Nominal Supply Current20mA
Supply Voltage-Min (Vsup)1.7V
Page Size2Kwords
JESD-609 Codee1
Time@Peak Reflow Temperature-Max (s)30
Peak Reflow Temperature (Cel)260
Standby Current-Max0.00005A
Write Cycle Time - Word, Page30ns
Length12mm
Operating Supply Voltage1.8V
Sync/AsyncAsynchronous
Part StatusObsolete
Published2008
Data PollingNO
Base Part NumberNAND01G-A

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