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F10NM65N

Part No F10NM65N
Manufacturer STMicroelectronics
Description -
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Operating Temperature150u00b0C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C9A (Tc)
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250u00b5A
Supplier Device PackageTO-220FP
Drain to Source Voltage (Vdss)650 V
SeriesMDmeshu2122 II
Power Dissipation (Max)25W (Tc)
Package / CaseTO-220-3 Full Pack
TechnologyMOSFET (Metal Oxide)
MfrSTMicroelectronics
Part StatusObsolete
Vgs (Max)u00b125V
Drive Voltage (Max Rds On, Min Rds On)10V
PackageTube
Base Product NumberSTF10N

Introduce

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