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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSB012N03LX3 G
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BSB012N03LX3 G

Part No BSB012N03LX3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 180A 2WDSON
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Package / Case:3-WDSON
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id:2.2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 30V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
FET Feature:-
Moisture Sensitivity Level (MSL):3 (168 Hours)
Email:sale@wisdommobility.com
FET Type:N-Channel
Series:OptiMOS™
Current - Continuous Drain (Id) @ 25°C:39A (Ta), 180A (Tc)
Other Names:BSB012N03LX3 GCT BSB012N03LX3 GCT-ND BSB012N03LX3GCT
Input Capacitance (Ciss) (Max) @ Vds:16900pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:1.2 mOhm @ 30A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:169nC @ 10V
Operating Temperature:-40°C ~ 150°C (TJ)

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