Submitting.....
Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6635
Images are for reference only.
See Product Specifications for product details.
Buy IRF6635 with confidence from wisdommobility.com, 1 Year Warranty

IRF6635

Part No IRF6635
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 32A DIRECTFET
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
Availability:11154 pcs
Quantity Unit Price Ext. Price
1+ $1.3608 $136
10+ $1.3336 $667
100+ $1.2928 $1293
1000+ $1.2519 $1252
10000+ $1.1975 $1198
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Submit a Request A Quote on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.00
  • Part No
  • Company Name
  • Contact Name
  • E-mail
  • Phone
  • Country

Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Package / Case:DirectFET™ Isometric MX
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:DIRECTFET™ MX
Vgs(th) (Max) @ Id:2.35V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Detailed Description:N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
FET Feature:-
Moisture Sensitivity Level (MSL):3 (168 Hours)
Email:sale@wisdommobility.com
FET Type:N-Channel
Series:HEXFET®
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:5970pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:1.8 mOhm @ 32A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:71nC @ 4.5V
Operating Temperature:-40°C ~ 150°C (TJ)

Introduce

We can supply IRF6635 , send us a request quote to request IRF6635 pirce and lead time.Wisdom Mobility is a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF6635.The price and lead time for IRF6635 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part IRF6635.We look forward to working with you to establish long-term relations of cooperation

Related parts for IRF6635

Image Part Number Manufacturers Description View
IRF6001I Texas Instruments BGA
IRF60B217 Infineon Compliant Through Hole Lead Free 9 mΩ TO-220-3 Production (Last Updated: 2 years ago) 1000
IRF60B217 Infineon Technologies MOSFET N-CH 60V 60A TO220AB
IRF60B217 International Rectifier TRENCH 40<-<100V
IRF60DM206 Infineon MOSFET N-CH 60V 130A
IRF60DM206 Infineon Technologies MOSFET N-CH 60V 130A DIRECTFET
IRF60DM206 International Rectifier IRF60 - 12V-300V N-CHANNEL POWER
IRF60DM206ATMA1 Infineon Technologies FET N-CHANNEL
IRF60DM206TRPBF International Rectifier DIRECTFETME
IRF60DM229TRPBF International Rectifier DIRECTFETME
IRF60N06 FSC TO-252TO-220
IRF60R217 Infineon Compliant Surface Mount 2.52 mm Lead Free Tape & Reel 9.9 mΩ TO-252-3
IRF60R217 Infineon Technologies MOSFET N-CH 60V 58A DPAK
IRF60SC241ARMA1 INFINEON
IRF60SC241ARMA1 Infineon Technologies MOSFET N-CH 60V 360A TO263-7
IRF610 Vishay MOSFET N-CH 200V 3.3A TO-220AB
IRF610 International Rectifier Non-Compliant 200 V Contains Lead Bulk 17 ns 3.3 A 36 W 200 V
IRF610 Fairchild Semiconductor Non-Compliant TO-220AB 3.3 A 200 V
IRF610 Vishay / Siliconix MOSFET N-CH 200V 3.3A TO-220AB
IRF610 Vishay Siliconix MOSFET N-CH 200V 3.3A TO220AB
IRF610* International Rectifier TO-220
IRF610-TSTU SAMSUNG
IRF6100 IRF MICRO
IRF6100 Infineon Non-Compliant Surface Mount Contains Lead Cut Tape 12 ns 65 mΩ -5.1 A 4
IRF6100 Infineon Technologies MOSFET P-CH 20V 5.1A 4FLIPFET
IRF6100PBF Infineon MOSFET P-CH 20V 5.1A FLIPFET
IRF6100PBF Infineon Technologies MOSFET P-CH 20V 5.1A 4FLIPFET
IRF610A International Rectifier TO-220
IRF610A ON Semiconductor
IRF610B FAIRCHILD TO220
IRF610B Fairchild Semiconductor N-CHANNEL POWER MOSFET
IRF610L Vishay MOSFET N-CH 200V 3.3A TO-262
IRF610L Vishay / Siliconix Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB
IRF610L Vishay Siliconix MOSFET N-CH 200V 3.3A TO262
IRF610LPBF Vishay MOSFET N-CH 200V 3.3A TO-262
IRF610LPBF Vishay / Siliconix Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB
IRF610LPBF Vishay Siliconix MOSFET N-CH 200V 3.3A I2PAK
IRF610P-VB VBsemi Elec 200V 5A 0.85Ω@10V,5A N Channel TO-220AB MOSFETs ROHS
IRF610PBF Vishay -
IRF610PBF International Rectifier Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
IRF610PBF Vishay / Siliconix MOSFET N-CH 200V 3.3A TO-220AB
IRF610PBF Vishay Siliconix MOSFET N-CH 200V 3.3A TO220AB
IRF610PBF-BE3 Vishay / Siliconix MOSFET N-CH 200V 3.3A TO220AB
IRF610PBF-BE3 Vishay Siliconix MOSFET N-CH 200V 3.3A TO220AB
IRF610S Vishay MOSFET N-CH 200V 3.3A D2PAK
IRF610S Vishay / Siliconix MOSFET N-CH 200V 3.3A D2PAK
IRF610S Vishay Siliconix MOSFET N-CH 200V 3.3A D2PAK
IRF610S2497 Harris 3.3A 200V 1.500 OHM N-CHANNEL
IRF610S2497 Harris Corporation 3.3A 200V 1.500 OHM N-CHANNEL
IRF610SPBF Vishay Dissipation on 1" Sq. PCB:3W; Pulse Current Idm:10A; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V